“The engineering advancements help overcome significant barriers in introducing a technology that holds the potential to significantly transform computer designs. Phase-change memory (PCM), could snuggle up alongside conventional dynamic random access memory (DRAM) to improve computer performance in ways that flash memory so far can’t. It’s not as fast as DRAM, but IBM says it’s 100 times faster at reading and writing data than flash memory, its chief competitor today.”
BM's prototype multilevel cell phase-change memory (MLC PCM) chip (Credit: IBM)
By: Stephen Shankland at CNET
Read more: http://news.cnet.com/8301-30685_3-20075608-264/ibm-leaps-two-hurdles-for-next-gen-memory/#ixzz1Qld7ez5y
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